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C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: Excellent hFE Linearity Complementary to A1015 Chip Appearance
Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 350umx350um 21020um 110umx110um 100umx100um Al Au(As) 40um 6 inch
Electrical Characteristics( Ta=25)
Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=60V, IE=0 VEB=5V, IC=0 IC=0.1mA, IC=1mA, IE=0.1mA, VCE=6V, IC=2mA IC=100mA,IB=10mA 60 50 5.0 150 600 0.30 V Min Max 0.1 0.1 Unit uA uA V V V
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May.2004 Version :0.0 Page 1 of 1
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